Abstract
Q-switched microchip lasers [1] are required for many applications because of their compact size, high pulse energy, and cost effectives. The use of semiconductor saturable absorber mirror (SESAM) as a passive Q-switching element in these lasers has enabled pulse shortening down to 22 ps at the wavelength of 1.06 μm [2]. At 1.34 μm [3], the development has been hindered by the difficulty to manufacture semiconductor mirror structures on InP.
© 2015 IEEE
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