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  • 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
  • (Optica Publishing Group, 2013),
  • paper CFIE_12_1

Temporal Slicing of Intense Multi-THz Transients Using an Ultrafast Semiconductor Switch

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Abstract

Advances in the femtosecond THz opto-electronics have set the stage for a novel class of nonlinear optical experiments exploiting the extreme limits of light-matter interaction. The spectral range of phase-stable multi-THz transients generated by means of difference frequency mixing spans over a multi-octave frequency window. Simultaneously, field-sensitive electro-optic detection provides full access to the temporal pulse shape. Currently, phase-locked multi-THz transients range from multi-cycle waveforms with highest peak electric fields in excess of 100 MV/cm [1] down to a single oscillation of the carrier wave with maximum field above 10 MV/cm [2]. Generally, the interaction length within the emitter crystal yields a trade-off between peak electric field and spectral bandwidth [2]. It would be desirable to combine the advantages of highest peak electric fields and short pulse durations in a single waveform. A promising tool for this purpose is a switching technique based on an ultrafast plasma mirror (UPM) [3].

© 2013 IEEE

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