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Optica Publishing Group
  • 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
  • (Optica Publishing Group, 2013),
  • paper CE_P_1

Structural and optical properties of epitaxially grown Nd3+-doped InYO3 thin films on Lu2O3

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Abstract

Thin rare-earth doped oxide films with a high refractive index compared to the substrate are promising candidates for optically active waveguides. In2O3 exhibits a high refractive index of about 2.5 at a wavelength of 633 nm. Therefore, In2O3 grown on Lu2O3 provides a waveguiding structure with wide acceptance angles and a high confinement. Due to the similar crystal structure In2O3 can be grown epitaxially on Lu2O3 with the Pulsed Laser Deposition method (PLD) [1]. Caused by the different lattice constants, stress is induced in the grown thin films, making lattice matched films more suitable. With PLD, the film stoichiometry can be set by the stoichiometry of the used target. Thus, the lattice constant of a binary film can be shifted to the lattice constant of the substrate according to the Vegard rule [2]. Due to the lattice matching, stress in the film is reduced and the crystallite size increases. Among the different investigated systems, Nd3+-doped InYO3 proved to be promising. InYO3 was grown epitaxially on Lu2O3 substrates with different crystal orientations. In all cases 2D island growth was indicated by in-situ electron diffraction. Atomic force microscopy revealed flat film surfaces with a RMS roughness of 10 nm for the {111} oriented sample. XRD measurements were performed on the InYO3 films grown on different Lu2O3, all confirming epitaxial growth, i.e. only peaks corresponding to the crystal orientations predetermined by the single crystalline substrate could be observed (Fig. 1a). The still existing small lattice mismatch of less than 1% can be further reduced by fine tuning the target stoichiometry of the InYO3 targets. Fluorescence spectroscopy pointed out that the emission peaks are at the same wavelengths as in comparably doped Nd:Lu2O3 bulk crystals (Fig. 1b). The fluorescence lifetime of the thin films was measured to 261 µs, which is close to the fluorescence lifetime of bulk Nd3+-doped Lu2O3 (290 µs). Waveguiding was realized and the waveguide losses were measured to be L = 14.45 dB/cm by fluorescence streak imaging with an excitation wavelength of 822 nm [3]. Since the method includes absorption losses, the pure scattering losses should be much lower. Rare-earth doped InYO3 films exhibit higher crystallinity in comparison to doped In2O3 films, with crystallite size increasing by a factor of 3. The films still have a high refractive index, making InYO3 on Lu2O3 an interesting system to be studied further.

© 2013 IEEE

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