Abstract

Radio frequency (RF) surface acoustic waves (SAW) are versatile tool to control and manipulate charge and spin excitations in semiconductor structures. We recently applied this unique, fast control mechanism to dynamically modulate the optical emission of single semiconductor nanowires (NWs) at radio frequencies exceeding 650 MHz. However, in these experiments surface recombination inhibited the SAW-transport of electrons and holes along the axis of uncapped GaAs NWs [1]. The underlying processes are strongly dependent on the acoustic amplitude and directly reflect the charge carrier mobilities in the investigated structure [2,3].

© 2013 IEEE