Abstract

Dilute nitride GaInNAs/GaAs quantum well (QW) lasers have been subject to intensive study since being first proposed by Kondow et al. [1]. Dilute nitride GaInNAs materials have a wide range of applications such as long wavelength infrared laser diodes, high efficient multi)junction solar cells, broad band semiconductor optical amplifiers (SOA) and tuneable lasers. The GaInNAs/GaAs material system has a large band)gap bowing which results in a large conduction band offset [2] and this system has the potential to cover a range of optical communication wavelengths by controlling the N composition. Also, the reduced temperature sensitivity and observed broad)band gain have made GaInNAs a promising candidate for un)cooled and tuneable communication lasers at 1.3 /μm.

© 2013 IEEE