Abstract

Vertical External Cavity Surface Emitting Lasers (VECSEL) operating in the mid-IR have recently been described [1-3]. IV-VI semiconductors like PbSe, PbTe and PbS have shown to be very suited for fabrication of the active layer. However, the employed active regions have been restricted to quantum well or bulk structures. Here, we present the first vertical external cavity surface emitting lasers (VECSELs) based on quantum dot (QD) active regions and operating in the wavelength range above 2.8 µm.

© 2013 IEEE