Abstract

The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss – at least for the low to medium density regime.

© 2011 Optical Society of America