Abstract

A four input, four output multi-stage optoelectronic switching circuit is implemented on an active-passive regrown InGaAsP/InP epitaxial wafer [1]. The circuit incorporates shallow low-loss waveguides and waveguide crossings in combination with deeply-etched low-radius (0.1mm) waveguide bends and multimode interference couplers to enable very high density circuit design. Amplifier gates are implemented within the multi-quantum wells active regions which have been designed for a gain peak at 1550nm. These are separately addressed to enable the reconfigurable routing through the switching circuit. Figure la shows a microscope photograph of the fabricated and wire bonded circuit.

© 2009 IEEE