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Conferences > CLEO_Europe > 2009 > CE > CE_P31
  • CLEO/Europe and EQEC 2009 Conference Digest
  • (Optica Publishing Group, 2009),
  • paper CE_P31

High Aspect Ratio Inductively Coupled Plasma (ICP) Etching of InP/InGaAsP/AlGaInAs Using Cl2/Ar/N2 Gas Mixture

R. Dylewicz, A. C. Bryce, M. Sorel, and R. M. De La Rue

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Abstract

In this paper we report the optimization of an ICP dry etching process for the fabrication of submicron-sized features in a range of InP-based materials. High-resolution, deep (> 3.0 μm) dry etching is desirable for fabrication of Distributed Bragg Reflectors (DBRs) and chirped gratings, especially in ridge waveguide lasers.

© 2009 IEEE

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