Abstract
As a centrosymmetric crystal, bulk silicon lacks the crucial second-order nonlinearity χ(2) – the cornerstone of parametric light conversion. Although it has been demonstrated that mechanical stress can create χ(2) effects [1,2], efficient parametric χ(2) processes require a means to achieve phase matching. A powerful approach for efficient parametric conversion is quasi-phase matching (QPM) by periodic poling. However, conventional poling methods are not applicable to silicon because it lacks an intrinsic dipole moment. Here we show through numerical simulations, that (1) periodic stress gradients along a silicon waveguide can be realized by integrated thin films, (2) the stress gradient create χ(2) and modulate its sign in a periodic fashion, and (3) the structure can lead to efficient generation of mid-wave infrared (MWIR) from commonly available near-infrared (NIR) laser sources. This so-called Periodically Poled Silicon (PePSi) brings the powerful periodic poling capability to silicon, where the excellent material's properties and mature processing technology can be exploited for χ(2) processes.
© 2009 IEEE
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