Abstract

Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations because it increases the spectrum of pump diodes suitable for a given emission wavelength [1]. For example, a record output for 850 nm vertical-external-cavity surface-emitting lasers (VECSEL) was demonstrated by using highly developed and relatively inexpensive pump diodes at 808 nm [1]. An additional benefit is the reduced quantum defect leading to a reduced thermal load.

© 2009 IEEE