Abstract
Cadmium telluride (CdTe) is a wide band gap II-VI compound with promising applications as promising semiconductor materials, especially in layered structures, for manufacturing X-ray and γ-ray detectors. From the point of view of its relatively large bandgap energy, high atomic numbers of components, good charge-transport properties and high resistivity, is one of the most suited materials for the fabrication of X-ray and γ-ray detectors, which can operate at room temperatures. To date, a number of growth techniques, in particular, Molecular-Beam Epitaxy (MBE) and Liquid-Phase Epitaxy (LPE) have been employed to grow of CdTe thin films on variuos substrates, including monocrystals CdTe, ZnCdTe with various crystallographic orientations. But, the thin-film detectors based on CdTe thin films will have high potential for commercialization only, when manufacturing cost of their will be significantly reduced.
© 2007 IEEE
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