Abstract

In recent years, with the increased power of THz sources and improved detection techniques, there has been much interest in using THz radiation for spectroscopy, chemical and biomedical imaging, and tomography¹. THz radiation can also be used to estimate the carrier mobility and doping concentrations of semi-conductor wafers. Non-destructive methods for detecting erroneous doping profiles, early in the manufacturing process, can offer significant cost benefits and is thus of interest to the semi-conductor industry.

© 2007 IEEE