Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • CLEO/Europe and IQEC 2007 Conference Digest
  • (Optica Publishing Group, 2007),
  • paper CF_1

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Not Accessible

Your library or personal account may give you access

Abstract

Operating optic-to-electronic data conversion at the terahertz (THz) frequency range is one of the most promising issue of optoelectronic devices. Recently, experimental studies on the plasma resonant detection in high electron mobility transistors (HEMTs) have been published [1], For submicron gate-lengths, fundamental plasma frequencies reach the THz range [2], THz plasma waves resonances can also be excited by means of interband photoexcitation using the difference-frequency component of a photomixed cw laser beam [3, 4].

© 2007 IEEE

PDF Article
More Like This
Bias voltage dependency of plasmonic instability and terahertz radiation in a dual-grating-gate high-electron-mobility transistor

Tomotaka Hosotani, Akira Satou, and Taiichi Otsuji
AM3R.6 CLEO: Applications and Technology (CLEO:A&T) 2021

Terahertz Detectors and Emitters Based on Plasma Wave Oscillations in Nanometer Gate Length Transistors

Wojciech Knap
CTuX1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Photoelectrochemical Oxidation Method

Li-Hsien Huang, Shu-Hao Yen, Ching-Ting Lee, Haipeng Tang, Jennifer Bardwell, and James B. Webb
WA1_6 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved