Abstract
The basic purpose of the study is the development of the methods of manufacturing laser epitaxial films, doped by neodymium and chromium ions for application as active elements and passive Q-switches of neodymium lasers. We present the results of investigations of the gadolinium-gallium (GGG) and gadolinium-scandium-aluminum (GSAG) garnet films grown by liquid phase epitaxy (LPE) method. We have studied spectral and lasing characteristics of the epilayers and the growing conditions influence to the film properties. Samples of epitaxial films of different composition starting from pure (undoped) GGG and GSAG and then doped with Nd or Cr ions (with Mg or Ca codoping) were grown by LPE technique with 10-120 μm thickness and 76 mm in diameter.
© 2007 IEEE
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