Abstract

The major limitation to the integration of optical and electronic functionality using standard silicon processing technology is the lack of silicon light sources. However, it has been recently discovered that low dimensional silicon structures, like silicon nanocrystals embedded in a transparent dielectric matrix, can have interesting emission properties. Feasibility of electroluminescent devices using such materials has already been demonstrated [1]. Different techniques (ion implantation, Plasma Enhanced Chemical Vapour Deposition, sputtering...) have been solicited in order to fabricate these materials, each having advantages and drawbacks. In our work, the active layer is obtained by Low Pressure Chemical Vapour Deposition (LPCVD), a technique that has not been extensively studied [2], but presents several advantages. Among them is the lùgli quality and homogeneity of the deposited films, the full compatibility with CMOS processing and the lùgli output yield.

© 2007 IEEE

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