Abstract
The major limitation to the integration of optical and electronic functionality using standard silicon processing technology is the lack of silicon light sources. However, it has been recently discovered that low dimensional silicon structures, like silicon nanocrystals embedded in a transparent dielectric matrix, can have interesting emission properties. Feasibility of electroluminescent devices using such materials has already been demonstrated [1]. Different techniques (ion implantation, Plasma Enhanced Chemical Vapour Deposition, sputtering...) have been solicited in order to fabricate these materials, each having advantages and drawbacks. In our work, the active layer is obtained by Low Pressure Chemical Vapour Deposition (LPCVD), a technique that has not been extensively studied [2], but presents several advantages. Among them is the lùgli quality and homogeneity of the deposited films, the full compatibility with CMOS processing and the lùgli output yield.
© 2007 IEEE
PDF ArticleMore Like This
Hea-Jeong Cheong, Atsushi Tanaka, Daihei Hippo, Kouichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda
JTuA97 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
L. Nataraj, F. Xu, and S. G. Cloutier
IWE2 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2010
Shuangyou Zhang, Toby Bi, Irina Harder, Olga Lohse, Florentina Gannott, Alexander Gumann, Yaojing Zhang, and Pascal Del’Haye
ck_5_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2023