Abstract

Narrow-linewidth semiconductor lasers emitting in the wavelength range between 760 and 790 nm are attractive for applications such as state selection in rubidium atomic clocks, Doppler laser cooling, nonlinear frequency conversion, Raman and absorption spectroscopy. These applications require a stable lasing frequency together with a high output power. Distributed feedback (DFB) diode lasers with high power and narrow linewidth can satisfy these requirements.

© 2007 IEEE