Measurement of the Linewidth Enhancement Factor of InGaAlAs and InGaAsP laser diodes using the Fourier Series Expansion of the Amplified Spontaneous Emission spectrum

D. Byrne; W. H. Guo; R. Phelan; Q. Y. Lu; J. F. Donegan; B. Corbett

CLEO/Europe and IQEC 2007 Conference Digest
(Optica Publishing Group, 2007),
paper CB_13

Measurement of the Linewidth Enhancement Factor of InGaAlAs and InGaAsP laser diodes using the Fourier Series Expansion of the Amplified Spontaneous Emission spectrum

D. Byrne, W. H. Guo, R. Phelan, Q. Y. Lu, J. F. Donegan, and B. Corbett

The European Conference on Lasers and Electro-Optics 2007

Munich Germany
ISBN: 1-4244-931-4

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D. Byrne, W. H. Guo, R. Phelan, Q. Y. Lu, J. F. Donegan, and B. Corbett, "Measurement of the Linewidth Enhancement Factor of InGaAlAs and InGaAsP laser diodes using the Fourier Series Expansion of the Amplified Spontaneous Emission spectrum," in CLEO/Europe and IQEC 2007 Conference Digest, (Optica Publishing Group, 2007), paper CB_13.

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Abstract

The optical gain and linewidth enhancement factor (α) of a semiconductor laser are important parameters for device performance and design, especially for widely tunable lasers. TheHakki-Paoli(H-P) method [1] is the most common method for measuring a. However this method of determining α is dependent on the resolution bandwidth of the analyser used. Here we introduce the Fourier Series Expansion (FSE) method to calculate α by first finding the round trip gain as in [2] by performing a Fourier series expansion on each longitudinal mode in the cavity and finding the ratio of two successive Fourier coefficients.

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