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Optica Publishing Group
  • CLEO/Europe and IQEC 2007 Conference Digest
  • (Optica Publishing Group, 2007),
  • paper CB1_5

High-power, high-brightness, tunable GaSb-based VECSEL at 2.X μm

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Abstract

Optically pumped Vertical-Extemal-Cavity Surface-Emitting Lasers (VECSELs) [1] are attracting considerable current interest. This is due to the fact that they combine advantageous features of classical semiconductor diode lasers, such as the wavelength versatility of the gain medium composed of semiconductor quantum structures, with attractive properties of classical solid state lasers, such as a high quality output beam and the capability to accommodate active or passive components within the cavity for temporal or spectral manipulation of the laser output. Up to now, R&D on VECSELs has been focused almost exclusively on the development of lasers emitting in the near infrared spectral range (1 - 1.5 μm wavelength interval, see e.g. [1-2]).

© 2007 IEEE

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