Abstract
Semiconductor disk lasers (SDLs) posses many good properties such as high output power in circular Gaussian mode, wide selection of available wavelengths and potentially small footprint. The cavity configuration of SLDs enables convenient use of intra-cavity nonlinear crystals and filters to modify the laser properties. One of the most exciting development areas of SDLs is the intracavity-frequency conversion to achieve emission at visible wavelengths. High power frequency doubled blue and green emitting SDLs [1] have been already demonstrated by a number of groups. Emission at red wavelength can be obtained either directly using a short wavelength pump source or by frequency doubling of 1200-1300 nm radiation. This wavelength range can be accessed with semiconductors using InP, GaAsSb/GaAs, or GalnNAs/GaAs material systems. So far, the work on high power InP-based SDLs has been hindered by the lack of high quality Bragg mirrors. On the other hand, the properties of GaAsSb/GaAs gain medium are not well suited for high-power operation in room temperature [2].
© 2007 IEEE
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