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Layer Degree of Freedom for Ultrafast Exciton Dynamics in Transition Metal Dichalcogenides

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Abstract

We demonstrate layer-engineered crossover of relaxation pathways from fast exciton- exciton annihilation in monolayer to slow phonon bottleneck in few-layer MoS2. Our study reveals new, layer degree of freedom to tune ultrafast dynamics in optoelectronic applications.

© 2021 The Author(s)

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