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Electrically Pumped Light-emitting Device Based on MoTe2 Directly Integrated with Doped Silicon

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Abstract

We demonstrate an electrically pumped light emitting device by integrating a monolayer MoTe2 directly on doped Silicon to form a Si-MoTe2 double heterostructure. An external quantum efficiency of ~0.65% was achieved.

© 2020 The Author(s)

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