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High-Efficiency Single-Junction GaAs Solar Cell using ITO-Film as an Antireflection and Passivation Layer Deposited on AlInP layer by Thermally RF Sputtering

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Abstract

This study presents high-efficiency of 23.52% single-junction GaAs solar cell using ITO-film as antireflection and passivation layer deposited by thermally-RF-sputtering. The impressive enhanced in efficiency of 8.94% was obtained, compared to the cell with SiO2-film.

© 2017 Optical Society of America

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