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Backside-illuminated CMOS photodiodes with polysilicon grating back-reflectors

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Abstract

Polysilicon grating reflectors are employed in thin backside-illuminated CMOS photodiodes to not only improve its responsivity for near-infrared light but also allow polarization-sensitive photocurrent generation. A 1.14x photocurrent enhancement is obtained for TE-polarized incidence.

© 2017 Optical Society of America

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