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GaN-based Ridge Waveguides with Very Smooth and Vertical Sidewalls by ICP Dry Etching and Chemical Etching

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Abstract

GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated with combined inductively coupled plasma (ICP) etching and chemical etching. Reduction in scattering loss is estimated to be 2 dB/mm at 1.55 μm.

© 2015 Optical Society of America

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