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The Effect on Dot Gain Behaviour of Confining Layer Composition in InP/(Al)GaInP Quantum Dot Lasers

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Abstract

Reductions in non-radiative recombination and αi with increasing Ga composition of the upper-confining-layer in InP self-assembled quantum-dot lasers reduce threshold-current-density and temperature dependence. Carrier population of 2-D layers limits further improvement at higher Ga compositions.

© 2015 Optical Society of America

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