Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Effect of Quantum Confinement in Si-QD on Free-Carrier Modulation Bandwidth and Cross-Section of the SiOx:Si-QD Waveguide

Not Accessible

Your library or personal account may give you access

Abstract

The free-carrier cross-section of Si-QD is decreased from 5.5×10−17 to 9×10−18 cm2 with shortened lifetime from 10 to 0.48 μs when shrinking Si-QD size from 4.3 to 1.7 nm due to the quantum confinement effect.

© 2014 Optical Society of America

PDF Article
More Like This
Free-carrier Absorption in Si Nanocrystals Probed by Microcavity Photoluminescence

Rohan D. Kekatpure, Alex R. Guichard, and Mark L. Brongersma
CTuJ3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

All-Optical Intensity Modulation in Polymer Waveguides Doped with Si Quantum Dots

A. Marinins, A. Udalcovs, O. Ozolins, X. Pang, J.G.C. Veinot, G. Jacobsen, I. Sychugov, J. Linnros, and S. Popov
JW2A.31 CLEO: Applications and Technology (CLEO:A&T) 2018

Plasma Power Detuned Synthesis of Si-QD doped Si-rich SiOx Thin Film for Multicolor Electroluminescent Diodes

Chih-Hsien Cheng, Yu-Chung Lien, and Gong-Ru Lin
ATh2F.5 Asia Communications and Photonics Conference (ACP) 2012

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.