The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×108 cm−2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20mA due to the high quality thin GaN and excellent heating dissipation.
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