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Cubic GaInN/GaN Multi-Quantum Wells for Increased Smart Lighting System Efficiency

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Abstract

Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.

© 2012 Optical Society of America

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