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New Approach to Fabricate a Deep Field Stop Layer on the Backside of Power Semiconductor IGBT

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Abstract

Fabrication of a deep field stop layer is the key to backside process of IGBT. The shallow-implanted P-dopant was far deeply activated by Pulse-cw hybrid laser annealing. The approach leads to the low-cost process without MeV-class implantation.

© 2012 Optical Society of America

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