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Sub-Threshold Time-Resolved Spectroscopy of Mid-UV AlGaN Laser Diode Structures Pseudomorphically Grown on Bulk AlN

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Abstract

AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.

© 2012 Optical Society of America

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