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Conferences > CLEO_AT > 2012 > JTh1K > JTh1K.5

Design of an Integrated III-V Semiconductor Single-Plasmon Source

Choon How Gan, Jean-Paul Hugonin, and Philippe Lalanne

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Abstract

We propose a single plasmon source integrated on a semiconductor III V platform. Analytic and numerical calculations show that an ultra small resonating cavity can boost the spontaneous decay rate by 20 fold and the source efficiency by 70%.

© 2012 Optical Society of America

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