High-power High-brightness Photonic Crystal Diode Laser Based on Ion Implantation

Zhonghao Chen; Zhonghao Chen; Zhonghao Chen; Hongwei Qu; Hongwei Qu; Xuyan Zhou; Xuyan Zhou; Xuyan Zhou; Aiyi Qi; Aiyi Qi; Yufei Wang; Yufei Wang; Wanhua Zheng; Wanhua Zheng; Wanhua Zheng

doi:10.1364/CLEOPR.2020.P1_5

14th Pacific Rim Conference on Lasers and Electro-Optics (CLEO PR 2020)
OSA Technical Digest (Optica Publishing Group, 2020),
paper P1_5
•https://doi.org/10.1364/CLEOPR.2020.P1_5

High-power High-brightness Photonic Crystal Diode Laser Based on Ion Implantation

Zhonghao Chen, Hongwei Qu, Xuyan Zhou, Aiyi Qi, Yufei Wang, and Wanhua Zheng

Conference on Lasers and Electro-Optics/Pacific Rim 2020

Sydney Australia
3–5 August 2020
ISBN: 978-0-646-82504-5

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Z. Chen, H. Qu, X. Zhou, A. Qi, Y. Wang, and W. Zheng, "High-power High-brightness Photonic Crystal Diode Laser Based on Ion Implantation," in 14th Pacific Rim Conference on Lasers and Electro-Optics (CLEO PR 2020), OSA Technical Digest (Optica Publishing Group, 2020), paper P1_5.

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Abstract

We have improved the beam quality of semiconductor lasers at high power through ion implantation and photonic crystal structure. The lasers achieved 10.2W at 11A and the brightness reached 102 MWcm^–1 sr^–1.

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