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Ultra-silicon-rich nitride based devices for high nonlinear figure of merit photonics applications

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Abstract

Nonlinear optics leveraging CMOS-compatible, ultra-silicon-rich nitride devices is presented. Films are engineered to possess high Kerr nonlinearity and negligible two-photon absorption at telecommunications wavelengths. We demonstrate high-gain optical parametric amplifiers, wavelength conversion, supercontinuum sources and slow light enhanced devices.

© 2018 The Author(s)

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