Abstract

Recently, transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂), have been studied for photovoltaic devices due to their superior optical properties^[1]. However, power conversion efficiency (PCE) of the devices, which were fabricated on the monolayer TMDs with direct bandgap property, has been limited because of mechanical limitation for absorbing incident light sufficiently owing to its extremely thin thickness (0.7 nm). In this light, rhenium disulfide (ReS₂) with a direct band gap property regardless of its thickness was proposed very lately for achieving highly efficient photovoltaic device.

© 2018 The Author(s)