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Conferences > CLEOPR > 2018 > Tu2H > Tu2H.5

Design of GaInAs/InP membrane p-i-n photodiode with back-end distributed-Bragg-reflector (DBR)

Xu Zheng, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama, and Shigehisa Arai

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Abstract

A GaInAs/InP membrane p-i-n photodiode (PD) integrated with a back end DBR was theoretically investigated under a condition of the back reflection of -30dB. As the result, it was found that the 3dB bandwidth of 17 GHz can be obtained with the absorption section length of 12 μm. These are approximately 3 times faster and 1/3 times smaller than those of a similar PD without the back end DBR.

© 2018 The Author(s)

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