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Conferences > CLEOPR > 2017 > PSIII > s2484
  • 2017 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2017),
  • paper s2484

Lasing characteristics of GaInAsP stripe laser integrated on InP/Si substrate

Kazuki Uchida, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, and Kazuhiko Shimomura

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Abstract

We have successfully obtained GaInAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1µm thickness InP and silicon substrate. 1.2µm wavelength GaInAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained under pulsed condition.

© 2017 Optical Society of America

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