Abstract
Integration of ITO/TiO2/Silicon (metal–oxide-semiconductor; MOS) structure silicon (Si) solar cell and a biasing source of p-n Si solar cells on silicon on insulator wafer was demonstrated. The photovoltaic performances of MOS-structure depended on the biasing voltage are measured and compared. Impressive enhanced in conversion efficiency of 10.63% was obtained when the MOS-structure solar cell was biased a photovoltaic voltage of 2.1V.
© 2017 Optical Society of America
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