Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2017 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2017),
  • paper s1915

Ion implantation in silicon for photonic device trimming

Not Accessible

Your library or personal account may give you access

Abstract

We implemented germanium ion implantation based refractive index change in integrated photonics devices for device trimming. Partial annealing of the ion implanted section revealed the possibility to permanently adjust the resonant wavelength peak position to a target wavelength.

© 2017 Optical Society of America

PDF Article
More Like This
Permanent Trimming of Large-Scale Photonic Circuits with a Focused Silicon Ion Beam

Akhil Varri, Frank Brückerhoff-Plückelmann, Shabna Taheriniya, Daniel Bernhardt, Torsten Richter, Gerhard Wilde, and Wolfra H. Pernice
JW2A.12 CLEO: Applications and Technology (CLEO:A&T) 2023

Single Ion Implanted Silicon Devices Towards Few Photons Emission Regime For Space Quantum Communications

Enrico Prati, Takahiro Shinada, and Takashi Tanii
QTh7B.10 Quantum 2.0 (QUANTUM) 2020

Optical Waveguides by Germanium Ion Implantation on Silicon-on-Insulator Platform

Xia Chen, Milan M. Milosevic, Ali Z. Khokhar, David J. Thomson, and Graham T. Reed
Th3C.3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.