Abstract
We report on a hybrid phototransistor that consists of In2O3 nanowire covered with multilayer WSe2. The absorption of infrared light in multilayer WSe2 forms the accumulation of photogenerated carriers at the interface between WSe2 and In2O3 to enhance the conductance of nanowire. A responsivity of ~104 A W−1 and an on/off ratio of ~106 are obtained with 940 nm light irradiation at room temperature. The spectral response can be observed for photon energy near the bandgap of WSe2.
© 2017 Optical Society of America
PDF ArticleMore Like This
Han-Don Um, Amit Solanki, Ashwin Jayaraman, Roy G. Gordon, and Fawwaz Habbal
SM4J.5 CLEO: Science and Innovations (CLEO:S&I) 2019
Ti Xie, Rishi Maiti, and Volker J. Sorger
JTu3A.93 Frontiers in Optics (FiO) 2019
A. Bedoya-Calle, A. Torres-Castro, M. García-Méndez, and U. Ortiz-Mendez
LM4A.4 Solid-State and Organic Lighting (SOLED) 2012