Abstract
Cavity length dependence on lasing characteristics was obtained in the p-modulation doped double-capped InAs QDs laser on the InP substrate at 1.65μm wavelength. Stranski-Krastanov InAs QDs was grown low-pressure MOVPE, and employed the p-modulation doping in the capping layer during the double-capped process. Lasing characteristics was obtained under pulsed injection current at room temperature. We have shown the lasing wavelength and threshold current dependent on the cavity length of the laser.
© 2015 IEEE
PDF ArticleMore Like This
Kazuki Uchida, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, and Kazuhiko Shimomura
s2484 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017
Shuai Luo, Haiming Ji, Feng Gao, Xiaoguang Yang, and Tao Yang
JTh2A.7 CLEO: Applications and Technology (CLEO:A&T) 2015
Hirokazu Sugiyama, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Masaki Aikawa, Natsuki Hayasaka, Kazuki Uchida, and Kazuhiko Shimomura
s2356 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017