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Cavity length dependence on lasing characteristics was obtained in the p-modulation doped double-capped InAs QDs laser on the InP substrate at 1.65μm wavelength. Stranski-Krastanov InAs QDs was grown low-pressure MOVPE, and employed the p-modulation doping in the capping layer during the double-capped process. Lasing characteristics was obtained under pulsed injection current at room temperature. We have shown the lasing wavelength and threshold current dependent on the cavity length of the laser.
© 2015 IEEE
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