Abstract
Terahertz emission enhancement in SI-GaAs, having a deposited periodic 1D metal array, is reported. The one order enhancement is currently attributed to the localization of the terahertz electromagnetic field at the GaAs apertures.
© 2015 IEEE
PDF ArticleMore Like This
Kosaku Kato, Keisuke Takano, Yuzuru Tadokoro, and Makoto Nakajima
15a_2E_5 JSAP-OSA Joint Symposia (JSAP) 2015
Y. Liu and S. Blair
PD5 Integrated Photonics Research (IPR) 2003
Fangwei Ye, Bambi Hu, Dumitru Mihalache, and Nicolae C. Panoiu
QMD6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2010