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Wet etching properties of semipolar (11–22) GaN films are investigated by using the different dopants, such as Si and Mg. A trigonal prism cell structure with a (0001) c-plane and the next-nearest-neighbor {10–10} m-planes is formed by KOH wet etchant. Etching rate of semipolar (11–22) Si-doped GaN film was faster than Mg-doped and undoped GaN. Regardless of dopants, the etching rate increased with etching depth.
© 2015 IEEE
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