Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 26P_100

Low-Frequency Noise Characteristics of InGaN-Based Light-Emitting Diodes

Not Accessible

Your library or personal account may give you access

Abstract

We investigate the low-frequency noise characteristics of InGaN-based light-emitting diodes with different forward leakage currents. It is found that the low-frequency noise characteristics are closely correlated with the forward leakage current.

© 2015 IEEE

PDF Article
More Like This
Carrier Overflow in InGaN/GaN Light-Emitting Diodes Investigated by Temperature-Dependent Short-Circuit Current Characteristics

Dong-Kuk Youn, Gyeong Won Lee, Jong-In Shim, and Dong-Soo Shin
26P_108 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Study of the Ideality Factor of Blue Light-Emitting Diodes Using the Photovoltaic Characteristics

Jae-Hoon Ham, Chan-Hyoung Oh, Dong-Pyo Han, Hyunsung Kim, Jong-In Sim, Dong-Soo Shin, and Kyu-Sang Kim
26P_106 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Radiative and Non-radiative Carrier Lifetimes in InGaN-Based Light-Emitting Diodes Investigated by Impedance Analysis

Young-Jin Kim, Dong-Pyo Han, Gyeong Won Lee, Dong-Soo Shin, and Jong-In Shim
25H2_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.