Abstract
We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.
© 2015 IEEE
PDF ArticleMore Like This
S. K. Dutta, D. Du, J. Squier, P. P. Pronko, and R. K. Singh
CThS3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994
M. Garcia-Lechuga, J. Siegel, and J. Solis
CM_5b_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015
S. Nolte, K. Bergner, R. Krämer, D. Richter, S. Richter, C. Voigtländer, and F. Zimmermann
26B2_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015