All-Color Plasmonic Nanolasers with Ultralow Thresholds

Yu-Jung Lu; Jisun Kim; Hung-Ying Chen; Wen-Hao Chang; Chih-Kang Shih; Shangjr Gwo

2013 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2013),
paper WI4_1

All-Color Plasmonic Nanolasers with Ultralow Thresholds

Yu-Jung Lu, Jisun Kim, Hung-Ying Chen, Wen-Hao Chang, Chih-Kang Shih, and Shangjr Gwo

Conference on Lasers and Electro-Optics/Pacific Rim 2013

Kyoto Japan
30 June–4 July 2013
ISBN: 978-1-4673-6475-1

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Plasmonics II (WI4)

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Y. Lu, J. Kim, H. Chen, W. Chang, C. Shih, and S. Gwo, "All-Color Plasmonic Nanolasers with Ultralow Thresholds," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2013), paper WI4_1.

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Abstract

Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core–shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the In_xGa₁₋_xN alloy makes it possible to realize laser emission in the full visible spectrum.

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