Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes

T. Mino; T. Mino; H. Hirayama; N. Noguchi; N. Noguchi; T. Takano; T. Takano; K. Tsubaki; K. Tsubaki

2013 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2013),
paper WH2_5

Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes

T. Mino, H. Hirayama, N. Noguchi, T. Takano, and K. Tsubaki

Conference on Lasers and Electro-Optics/Pacific Rim 2013

Kyoto Japan
30 June–4 July 2013
ISBN: 978-1-4673-6475-1

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DUV-LEDs and Efficiency Improvements (WH2)

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T. Mino, H. Hirayama, N. Noguchi, T. Takano, and K. Tsubaki, "Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2013), paper WH2_5.

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Abstract

Development of high-quality and highly-uniform AlN/sapphire templates by using a NH₃ pulsed-flow method enabled the fabrication of highly-uniform 270-nm AlGaN-based deep-ultraviolet light-emitting diodes with the external quantum efficiency of over 2%.

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