Abstract
In this paper, we analyze the optical anisotropic behavior for the , and -plane semipolar InGaN/GaN single QW light emitting diodes (LEDs). The light emission polarization ratios of the , and -plane semipolar InGaN/GaN LEDs with different In compositions and strain relaxation were studied. Our results provide an useful information for designing the semipolar , and -plane InGaN/GaN quantum well.
© 2013 IEICE
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