Photonic Crystal Surface Emitting Lasers Based on Epitaxial Regrowth

R. J. E. Taylor; D.M. Williams; L. R. Shepherd; D.T. D. Childs; B.J. Stevens; S. Khamas; K.M. Groom; R.A. Hogg; R.A. Hogg; N. Ikeda; Y. Sugimoto

2013 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2013),
paper ThI1_5

Photonic Crystal Surface Emitting Lasers Based on Epitaxial Regrowth

R. J. E. Taylor, D.M. Williams, L. R. Shepherd, D.T. D. Childs, B.J. Stevens, S. Khamas, K.M. Groom, R.A. Hogg, N. Ikeda, and Y. Sugimoto

Conference on Lasers and Electro-Optics/Pacific Rim 2013

Kyoto Japan
30 June–4 July 2013
ISBN: 978-1-4673-6475-1

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Photonic Crystal Laser (ThI1)

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R. J. E. Taylor, D. M. Williams, L. R. Shepherd, D. T. D. Childs, B. J. Stevens, S. Khamas, K. M. Groom, R. A. Hogg, N. Ikeda, and Y. Sugimoto, "Photonic Crystal Surface Emitting Lasers Based on Epitaxial Regrowth," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2013), paper ThI1_5.

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Abstract

Design optimization of semiconductor photonic crystal laser (PCSEL) structure is discussed Mode confinement is compared for all-semiconductor and void PCSELs. A re-grown PCSEL, lasing at room-temperature based on GaAs/InGaP re-growth is realised, and device characteristics are described.

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