Directly InGaN-laser Diode Pumped Ti:Sapphire Laser

Shota Sawai; Hikaru Kawauchi; Kenichi Hirosawa; Fumihiko Kannari

2013 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2013),
paper ThA3_6

Directly InGaN-laser Diode Pumped Ti:Sapphire Laser

Shota Sawai, Hikaru Kawauchi, Kenichi Hirosawa, and Fumihiko Kannari

Conference on Lasers and Electro-Optics/Pacific Rim 2013

Kyoto Japan
30 June–4 July 2013
ISBN: 978-1-4673-6475-1

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Novel Solid State Laser Technologies (ThA3)

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S. Sawai, H. Kawauchi, K. Hirosawa, and F. Kannari, "Directly InGaN-laser Diode Pumped Ti:Sapphire Laser," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2013), paper ThA3_6.

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Abstract

We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ~100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.

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